 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CY62137VN MoBL(R) 2-Mbit (128K x 16) Static RAM Features * Temperature Ranges -- Industrial: -40C to 85C -- Automotive-A: -40C to 85C -- Automotive-E: -40C to 125C * High Speed: 55 ns * Wide voltage range: 2.7V-3.6V * Ultra-low active, standby power * Easy memory expansion with CE and OE features * TTL-compatible inputs and outputs * Automatic power-down when deselected * CMOS for optimum speed/power * Available in Pb-free 44-pin TSOP Type II package portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH) or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. Functional Description[1] The CY62137VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery LifeTM (MoBL(R)) in Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 10 ROW DECODER 128K x 16 RAM Array SENSE AMPS I/O0-I/O7 I/O8-I/O15 COLUMN DECODER BHE WE CE OE BLE CE BHE BLE A11 Power-down Circuit Note: 1. For best practice recommendations, please refer to the Cypress application note "System Design Guidelines" on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 001-06497 Rev. *A * 198 Champion Court A12 A13 A14 A15 A16 * San Jose, CA 95134-1709 * 408-943-2600 Revised August 3, 2006 [+] Feedback CY62137VN MoBL(R) Product Portfolio Power Dissipation VCC Range (V) Product CY62137VNLL Industrial CY62137VNLL CY62137VNLL Automotive-A CY62137VNLL Automotive-E Min. 2.7 Typ.[3] 3.0 Max. 3.6 55 70 70 70 Speed (ns) Operating, ICC (mA) Typ.[3] 7 7 7 7 Max. 20 15 15 15 Standby, ISB2 (A) Typ.[3] 1 1 1 1 Max. 15 15 15 20 Pin Configurations TSOP II (Forward) Top View A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC Pin Definitions Pin Number Type A0-A16. Address Inputs I/O0-I/O15. Data lines. Used as input or output lines depending on operation NC. This pin is not connected to the die Description 1-5, 18-22, 24-27, 42-45 Input 7-10, 13-16, 29-32, 35-38 Input/Output 23 17 6 40, 39 41 No Connect Input/Control WE. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted Input/Control CE. When LOW, selects the chip. When HIGH, deselects the chip Input/Control Byte Write Select Inputs, active LOW. BHE controls I/O15-I/O8, BLE controls I/O7-I/O0. Input/Control OE. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins Ground VSS. Ground for the device 12, 34 11, 33 Power Supply VCC. Power supply for the device Notes: 2. NC pins are not connected on the die. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP)., TA = 25C. Document #: 001-06497 Rev. *A Page 2 of 11 [+] Feedback CY62137VN MoBL(R) Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage to Ground Potential ............... -0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[4] ....................................-0.5V to VCC + 0.5V DC Input Voltage[4] .................................-0.5V to VCC + 0.5V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA Operating Range Range Industrial Automotive-A Automotive-E Ambient Temperature -40C to +85C -40C to +85C -40C to +125C VCC 2.7V to 3.6V Electrical Characteristics Over the Operating Range -55 Parameter VOH VOL VIH VIL IIX IOZ ICC Description Test Conditions Min. 2.4 0.4 2.2 -0.5 GND < VI < VCC GND < VO < VCC, Output Disabled IOUT = 0 mA, VCC = 3.6V Ind'l f = fMAX = 1/tRC, Auto-A/ CMOS Levels Auto-E IOUT = 0 mA, f = 1 MHz, CMOS Levels ISB1 Automatic CE Power-down Current--CMOS Inputs Automatic CE Power-down Current--CMOS Inputs Ind'l Auto-A/ Auto-E 100 -1 -1 7 VCC + 0.5V 0.8 +1 +1 20 2.2 -0.5 -1 -1 7 7 1 2 1 1 Typ.[3] Max. Output HIGH Voltage VCC = 2.7V, IOH = -1.0 mA Output LOW Voltage VCC = 2.7V, IOL = 2.1 mA Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current 2.4 0.4 VCC + 0.5V 0.8 +1 +1 15 15 2 2 100 100 1 15 1 1 1 15 15 20 A A mA -70 Min. Typ.[3] Max. Unit V V V V A A mA CE > VCC - 0.3V, VCC = 3.6V Ind'l VIN > VCC - 0.3V Auto-A/ or VIN < 0.3V, Auto-E f = fMAX CE > VCC - 0.3V VCC = 3.6V Ind'l/ VIN > VCC - 0.3V Auto-A or VIN < 0.3V, f=0 Auto-E ISB2 Capacitance[5] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = VCC(typ) Max. 6 8 Unit pF pF Thermal Resistance[5] Parameter JA JC Description Test Conditions TSOPII 60 22 Unit C/W C/W Thermal Resistance (Junction to Ambient) Still Air, soldered on a 4.25 x 1.125 inch, Thermal Resistance (Junction to Case) 2-layer printed circuit board Notes: 4. VIL(min.) = -2.0V for pulse durations less than 20 ns. 5. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-06497 Rev. *A Page 3 of 11 [+] Feedback CY62137VN MoBL(R) AC Test Loads and Waveforms R1 VCC OUTPUT 30 pF INCLUDING JIG AND SCOPE R2 VCC OUTPUT 5 pF INCLUDING JIG AND SCOPE R2 R1 VCC Typ 10% GND Rise Time: 1 V/ns ALL INPUT PULSES 90% 90% 10% Fall Time: 1 V/ns (a) (b) Equivalent to: THEVENIN EQUIVALENT RTH OUTPUT VTH (c) Parameters R1 R2 RTH VTH Value 1105 1550 645 1.75 Unit Ohms Ohms Ohms Volts Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR Description VCC for Data Retention Data Retention Current VCC = 1.0V, CE > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V; No input may exceed VCC + 0.3V Ind'l/Auto-A Auto-E 0 tRC Conditions Min. 1.0 0.5 7.5 10 ns ns Typ.[3] Max. Unit V A tCDR[5] tR Chip Deselect to Data Retention Time Operation Recovery Time Data Retention Waveform DATA RETENTION MODE VCC VCC(min.) tCDR VDR > 1.0 V VCC(min.) tR CE Document #: 001-06497 Rev. *A Page 4 of 11 [+] Feedback CY62137VN MoBL(R) Switching Characteristics Over the Operating Range Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE Write tWC tSCE tAW tHA tSA tPWE tSD tHD tHZWE tLZWE tBW Cycle[10, 11] Write Cycle Time CE LOW to Write End Address Set-up to Write End Address Hold from Write End Address Set-up to Write Start WE Pulse Width Data Set-up to Write End Data Hold from Write End WE LOW to High-Z[7, 8] [7] (9) [6] 55 ns Description Min. Max. Min. 70 ns Max. Unit Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low-Z [7] [7, 8] 55 55 10 55 25 5 25 10 25 0 55 55 5 25 70 70 10 70 35 5 25 10 25 0 70 70 5 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns OE HIGH to High-Z CE LOW to CE HIGH to Low-Z[7] High-Z[7, 8] CE LOW to Power-up CE HIGH to Power-down BHE / BLE LOW to Data Valid BHE / BLE LOW to Low-Z BHE / BLE HIGH to High-Z 55 45 45 0 0 40 25 0 20 5 50 70 60 60 0 0 50 30 0 25 10 60 ns ns ns ns ns ns ns ns ns ns ns WE HIGH to Low-Z BHE / BLE LOW to End of Write Notes: 6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input levels of 0 to VCC typ., and output loading of the specified IOL/IOH and 30 pF load capacitance. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 8. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 9. If both byte enables are toggled together this value is 10 ns. 10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 001-06497 Rev. *A Page 5 of 11 [+] Feedback CY62137VN MoBL(R) Switching Waveforms Read Cycle No. 1[12, 13] tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID Read Cycle No. 2[13, 14] CE tACE OE tDOE BHE/BLE tLZOE tHZBE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% 50% ISB ICC DATA VALID HIGH IMPEDANCE tHZOE tRC tPD tHZCE Notes: 12. Device is continuously selected. OE, CE = VIL. 13. WE is HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 001-06497 Rev. *A Page 6 of 11 [+] Feedback CY62137VN MoBL(R) Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled)[10, 15, 16] tWC ADDRESS CE tAW WE tSA tPWE tHA BHE/BLE tBW OE tSD DATA I/O NOTE 17 tHZOE DATAIN VALID tHD Write Cycle No. 2 (CE Controlled)[10, 15, 16] tWC ADDRESS CE tSA tAW tHA tSCE BHE/BLE tBW WE tPWE tSD tHD DATA I/O DATA VALID IN Notes: 15. Data I/O is high-impedance if OE = VIH. 16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 17. During this period, the I/Os are in output state and input signals should not be applied. Document #: 001-06497 Rev. *A Page 7 of 11 [+] Feedback CY62137VN MoBL(R) Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[11, 16] tWC ADDRESS CE tAW tBW tSA tHA BHE/BLE WE tSD DATA I/O NOTE 17 tHZWE DATA VALID IN tHD tLZWE Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[17] tWC ADDRESS CE tAW tBW tSA WE tSD DATA I/O NOTE 17 tHA BHE/BLE tHD DATA VALID IN tHZWE tLZWE Document #: 001-06497 Rev. *A Page 8 of 11 [+] Feedback CY62137VN MoBL(R) Typical DC and AC Characteristics Normalized Operating Current vs. Supply Voltage Standby Current vs. Supply Voltage 35 MoBL 30 25 ISB (A) 20 15 10 5 0 2.2 2.7 3.2 SUPPLY VOLTAGE (V) 3.7 1.0 2.7 2.8 3.7 1.9 SUPPLY VOLTAGE (V) 1.4 1.2 MoBL 1.0 ICC 0.8 0.6 0.4 0.2 0.0 1.7 Access Time vs. Supply Voltage 80 70 60 50 TAA (ns) 40 30 20 10 1.0 1.9 2.7 2.8 3.7 MoBL SUPPLY VOLTAGE (V) Truth Table CE H X L L L L L L L WE X X H H H H L L L OE X X L L L H X X X BHE X H L H L X L H L BLE X H L L H X L L H I/O8-I/O15 High-Z High-Z Data Out High-Z Data Out High-Z Data In High-Z Data In I/O0-I/O7 High-Z High-Z Data Out Data Out High-Z High-Z Data In Data In High-Z Mode Deselect/Power-down Deselect/Power-down Read Read Read Output Disabled Write Write Write Power Standby (ISB) Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Document #: 001-06497 Rev. *A Page 9 of 11 [+] Feedback CY62137VN MoBL(R) Ordering Information Speed (ns) 55 70 Ordering Code CY62137VNLL-55ZXI CY62137VNLL-70ZXI CY62137VNLL-70ZSXA CY62137VNLL-70ZSXE Package Diagram Package Type 44-pin TSOP II (Pb-free) 44-pin TSOP II (Pb-free) 44-pin TSOP II (Pb-free) Operating Range Industrial Industrial Automotive-A Automotive-E 51-85087 44-pin TSOP II (Pb-free) Please contact your local Cypress sales representative for availability of these parts Package Diagram 44-Pin TSOP II (51-85087) DIMENSION IN MM (INCH) MAX MIN. 22 1 PIN 1 I.D. 11.938 (0.470) 11.735 (0.462) 10.262 (0.404) 10.058 (0.396) OR E KXA SG 23 44 EJECTOR PIN TOP VIEW BOTTOM VIEW 0.800 BSC (0.0315) 0.400(0.016) 0.300 (0.012) BASE PLANE 0-5 0.10 (.004) 10.262 (0.404) 10.058 (0.396) 0.210 (0.0083) 0.120 (0.0047) 18.517 (0.729) 18.313 (0.721) 0.150 (0.0059) 0.050 (0.0020) 1.194 (0.047) 0.991 (0.039) SEATING PLANE 0.597 (0.0235) 0.406 (0.0160) 51-85087-*A MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 001-06497 Rev. *A Page 10 of 11 (c) Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback CY62137VN MoBL(R) Document History Page Document Title: CY62137VN MoBL(R) 2-Mbit (128K x 16) Static RAM Document Number: 001-06497 REV. ** *A ECN NO. Issue Date 426503 488954 See ECN See ECN Orig. of Change NXR NXR New Data Sheet Added Automotive product Updated Ordering Information table Description of Change Document #: 001-06497 Rev. *A Page 11 of 11 [+] Feedback |
Price & Availability of CY62137VNLL-55ZXI
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |